Packing: Tray
MOQ: 2K
SPECIFICATION
ELECTRICAL CARACTERISTICS
TEST NOTES: (25°±5°C)
| TR: (100KHz, 0.1V) | PINS:(2,3):(J1,J2)=1CT:1CT±3%;(4,5):(J3,J6)=1:1±3% |
|---|---|
| TR: (100KHz, 0.1V) | PINS:(6,7):(J4,J5)=1CT:1CT±3%;(8,9):(J7,J8)=1:1±3% |
| LX: (100KHz, 100mV, 8mA, DC Bias) | PINS: (J1,J2),(J3,J6),(J4,J5),(J7,J8)=350uH MINIMUM |
| DCR: PINS | (2,3),(4,5),(6,7),(8,9)=1.5 OHMS MAXIMUM. PINS: (J1,J2),(J3,J6),(J4,J5),(J7,J8)=1.5 OHMS MAXIMUM. |
| HIPOT | PINS(2,3)TO(J1,J2):(4,5)TO(J3,J6)=1500VAC FOR 2 SECONDS |
| HIPOT | PINS(6,7)TO(J4,J5);(8,9)TO(J7,J8)=1500VAC FOR 2 SECONDS |
| INSERTION LOSS | -0.5dB MAXIMUM AT 1MHz TO 65MHz -0.8dB MAXIMUM AT 65MHz TO 100MHz -1.2dB MAXIMUM AT 100MHz TO 125MHz |
| RETURN LOSS | -16dB MINIMUM AT 1MHz TO 30MHz -13.5dB MINIMUM AT 30MHz TO 40MHz -11.5dB MINIMUM AT 40MHz TO 50MHz -10dB MINIMUM AT 50MHz TO 80MHz |
| CROSS TALK | 30dB MINIMUM AT 1MHz TO 100MHz |
| COMMON TO DIFFERENTIAL MODE REJECTION | 30dB MINIMUM AT 1MHz TO 100MHz |
Attend
Memory Protection Devices, INC.
Memory Protection Devices, INC.
Memory Protection Devices, INC.
Ohmite
Attend
Memory Protection Devices, INC.
Memory Protection Devices, INC.
Ohmite
Attend
Memory Protection Devices, INC.




