Packing: Tray
MOQ: 2K
SPECIFICATION
ELECTRICAL CARACTERISTICS
TEST NOTES: (25°±5°C)
| TR: (100KHz, 0.1V) | PINS:(2,3):(J1,J2)=1CT:1CT±3%;(4,5):(J3,J6)=1:1±3% |
|---|---|
| TR: (100KHz, 0.1V) | PINS:(6,7):(J4,J5)=1CT:1CT±3%;(8,9):(J7,J8)=1:1±3% |
| LX: (100KHz, 100mV, 8mA, DC Bias) | PINS: (J1,J2),(J3,J6),(J4,J5),(J7,J8)=350uH MINIMUM |
| DCR: PINS | (2,3),(4,5),(6,7),(8,9)=1.5 OHMS MAXIMUM. PINS: (J1,J2),(J3,J6),(J4,J5),(J7,J8)=1.5 OHMS MAXIMUM. |
| HIPOT | PINS(2,3)TO(J1,J2):(4,5)TO(J3,J6)=1500VAC FOR 2 SECONDS |
| HIPOT | PINS(6,7)TO(J4,J5);(8,9)TO(J7,J8)=1500VAC FOR 2 SECONDS |
| INSERTION LOSS | -0.5dB MAXIMUM AT 1MHz TO 65MHz -0.8dB MAXIMUM AT 65MHz TO 100MHz -1.2dB MAXIMUM AT 100MHz TO 125MHz |
| RETURN LOSS | -16dB MINIMUM AT 1MHz TO 30MHz -13.5dB MINIMUM AT 30MHz TO 40MHz -11.5dB MINIMUM AT 40MHz TO 50MHz -10dB MINIMUM AT 50MHz TO 80MHz |
| CROSS TALK | 30dB MINIMUM AT 1MHz TO 100MHz |
| COMMON TO DIFFERENTIAL MODE REJECTION | 30dB MINIMUM AT 1MHz TO 100MHz |
Ohmite
Attend
Memory Protection Devices, INC.
Memory Protection Devices, INC.
Memory Protection Devices, INC.
Attend
Memory Protection Devices, INC.
Ohmite
Memory Protection Devices, INC.
Memory Protection Devices, INC.
Memory Protection Devices, INC.
Memory Protection Devices, INC.
Memory Protection Devices, INC.
Samtec
Attend
Memory Protection Devices, INC.
Masach Tech
Ohmite
Ohmite
Memory Protection Devices, INC.
Ohmite
Attend
Ohmite
Ohmite
Ohmite
Memory Protection Devices, INC.
Ohmite
Memory Protection Devices, INC.
Memory Protection Devices, INC.
Memory Protection Devices, INC.


